ON Semiconductor

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ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient connectivity, sensing, power management, analog, logic, timing, discrete, and custom devices. The company's products help engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical and aerospace/defense applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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Description

FCP11N60F : N-Channel SuperFET FRFET MOSFET 600V, 11A, 380m . For complete documentation, see the data sheet. SuperFET MOSFET is Fairchild Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FCP11N60F . FCP11N60F . Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FCP11N60F . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. DIODES AND MOSFET BODY DIODES USED IN THE EVALUATION. Part Number. Description. FCP11N60F . Fast recovery diode from 11A, 600V superjunction. Nov 5, 2009 FCP11N60F . 600. 0.380. 40. 11.00. 800. TO-220. FCA20N60F. 600. 0.190. 75. 20.00. 1100. TO-3PN. FCB20N60F. 600. 0.190. 75. 20.00. 1100.

Part Number FCP11N60F
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand ON Semiconductor
Description MOSFET N-CH 600V 11A TO-220
Series SuperFET
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 380 mOhm @ 5.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $1.85   Highest Price: $6.55
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ONSEMICON

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Gallop Great Holdings (Hong Kong) Limited

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Yingxinyuan INT'L (Group) Limited

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