Part Number | FCP104N60F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V TO-220 |
Series | HiPerFET, Polar |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6130pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 357W (Tc) |
Rds On (Max) @ Id, Vgs | 104 mOhm @ 18.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FCP104N60F
ONSEMICON
547
0.1
HEDEYI ELECTRONIC (HK) CO.,LIMITED
FCP104N60F
ON/ST
2191
0.59
Shenzhen Qiangneng Electronics Co., Ltd.
FCP104N60F
ON/CMD
7712
1.08
WIN AND WIN ELECTRONICS LIMITED
FCP104N60F
ON/SANYO
1248
1.57
Yingxinyuan INT'L (Group) Limited
FCP104N60F
ONSEM
4579
2.06
Redstar Electronic Limited