Part Number | FCP099N60E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V TO220 |
Series | SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3465pF @ 380V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 357W (Tc) |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 18.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
FCP099N60E
ONSEMICON
2170
0.45
HK HEQING ELECTRONICS LIMITED
FCP099N60E
ON/ST
20000
1.3225
Ande Electronics Co., Limited
FCP099N60E
ON/CMD
3500
2.195
FINECHIPS ELECTRONICS (HK) CO.,LIMITED
FCP099N60E
ON/SANYO
3000
3.0675
Shenzhen Qiangneng Electronics Co., Ltd.
FCP099N60E
ONSEM
14000
3.94
MY Group (Asia) Limited