Part Number | FCMT199N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 20.2A POWER88 |
Series | SuperFET II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 199 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Power88 |
Package / Case | 4-PowerTSFN |
Image |
FCMT199N60
ONSEMICON
20000
1.52
SHENZHEN YIXINWEI Co.,LIMTITED
FCMT199N60
ON/ST
8218
2.585
IC Chip Co., Ltd.
FCMT199N60
ON/CMD
48500
3.65
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FCMT199N60
ON/SANYO
6000
4.715
Redstar Electronic Limited
FCMT199N60
ONSEM
200
5.78
NEW IDEAS INDUSTRIAL CO., LIMITED