Description
Jan 13, 2017 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FCH22N60N . TO247-3. FSSZ. FSSZ. 5.456725. Apr 6, 2011 FCH22N60N 600V N-Channel SupreMOS. . MOSFET FCP16N60N 600V N-Channel SupreMOS. . MOSFET FCPF16N60NT 600V
Part Number | FCH22N60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 22A TO-247 |
Series | SupreMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1950pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 205W (Tc) |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
FCH22N60N
ONSEMICON
60
1.38
Sunny International Electronic Technology Limited
FCH22N60N**
ON/ST
49800
2.52
CIS Ltd (CHECK IC SOLUTION LIMITED)
FCH22N60N
ON/CMD
750
3.66
WIN AND WIN ELECTRONICS LIMITED
FCH22N60N
ON/SANYO
10000
4.8
Yingxinyuan INT'L (Group) Limited
FCH22N60N
ONSEM
11250
5.94
Ande Electronics Co., Limited