Part Number | FCD9N60NTM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 9A DPAK |
Series | SupreMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 92.6W (Tc) |
Rds On (Max) @ Id, Vgs | 385 mOhm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FCD9N60NTM
ONSEMICON
33885
0.59
HK HEQING ELECTRONICS LIMITED
FCD9N60NTM
ON/ST
18500
1.8325
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FCD9N60NTM
ON/CMD
90142
3.075
ATLANTIC TECHNOLOGY LIMITED
FCD9N60NTM
ON/SANYO
820
4.3175
Dan-Mar Components Inc.
FCD9N60NTM
ONSEM
20000
5.56
Redstar Electronic Limited