(4/5) based on 20 customer reviews
Description
Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FCD600N60Z . FCD600N60Z . TO252-3. (NiLFAlBW) (G). Jul 18, 2016. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FCD600N60Z . FCD600N60Z . STD10NM60N. STD10N60M2. TK7P60W. AOD7S60. SiHD7N60E. MMD60R580PRH. NCE60R540K. SSF7NS60D. LSG07N60. IPD60R460CE. FCD600N60Z . STD10NM60N. STD10N60M2. TK7P60W. AOD7S60. SiHD7N60E. MMD60R580PRH. NCE60R540K. SSF7N. IPD60R460CE. STD12N60M2. FCD600N60Z . STD10NM60N. STD10N60M2. TK7P60W. AOD7S60. SiHD7N60E. MMD60R580PRH. NCE60R540K. SSF7N. IPD60R460CE. STD12N60M2.
| Part Number | FCD600N60Z |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N CH 600V 7.4A DPAK |
| Series | SuperFET II |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 3.7A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
FCD600N60Z
ONSEMICON
20000
1.68
Bonase Electronics (HK) Co., Limited
FCD600N60Z
ON/ST
1015
2.5525
FLOWER GROUP(HK)CO.,LTD
FCD600N60Z
ON/CMD
890
3.425
KK Wisdom Limited
FCD600N60Z
ON/SANYO
1865
4.2975
WIN AND WIN ELECTRONICS LIMITED
FCD600N60Z
ONSEM
54700
5.17
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
