Description
Product Overview. FCD5N60 : N-Channel SuperFET MOSFET 600V, 4.6A, 950m . For complete documentation, see the data sheet. SuperFET MOSFET is L2. 22uH. Inductor, Power, 2.1A. 0.350 x 0.300 inch RFB0807-220L. Coilcraft. 1. Q1. FCD5N60 . MOSFET, N-ch, 600V, 4.6A, 0.8 ohm. DPAK. FCD5N60 . Fairchild. Qrr. Typ. (nC. ) Ciss. Typ. (pF). Coss. Typ. (pF). Crss. Typ. (pF). Pac kag e. Typ e. FCD5N60 -F085. AEC Qualified. PPAP. Capable. Pb-free. Halide free. Active. N-. Mar 4, 2011 FCD5N60 are 0603 unless noted otherwise. 68uF, 25V - E-Cap. C9. 47 - 1210. R6. OSnub. BSTr n primary:secondary:auxilliary. Low-line n 7. tO-220. FcPF7n60. 600. 0.6. 25. 7. tO-220F. Fcd5n60 . 600. 0.95. 16. 4.6 to-252 (dPak). Fcd4n60. 600. 1.2. 12.8. 3.9 to-252 (dPak). FcP4n60. 600. 1.2. 12.8. 3.9.
Part Number | FCD5N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 4.6A DPAK |
Series | Automotive, AEC-Q101, SuperFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 54W (Tj) |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 4.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FCD5N60
ONSEMICON
50550
0.2
HK HEQING ELECTRONICS LIMITED
FCD5N60
ON/ST
5000000
0.735
Hongkong Shengshi Electronics Limited
FCD5N60
ON/CMD
3000
1.27
Shenzhen Qiangneng Electronics Co., Ltd.
FCD5N60
ON/SANYO
21000
1.805
CIS Ltd (CHECK IC SOLUTION LIMITED)
FCD5N60_F085
ONSEM
18000
2.34
MY Group (Asia) Limited