Description
FCD3400N80Z . FCD3400N80Z . TO252-3. (NiLFAlBW) (G). Jul 18, 2016. 1.0. FSSZ. 0.29183 g. Each. Manufacturing Process Information. Terminal Finish. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FCD3400N80Z . Aug 8, 2016 FCPF1300N80Z. 2250 m / 11 nC FCD2250N80Z FCU2250N80Z. FCPF2250N80Z. 3400 m / 7.4 nC FCD3400N80Z . FCU3400N80Z.
Part Number | FCD3400N80Z |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 2A D2PAK |
Series | SuperFET II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 32W (Tc) |
Rds On (Max) @ Id, Vgs | 3.4 Ohm @ 1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
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