ON Semiconductor

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ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient connectivity, sensing, power management, analog, logic, timing, discrete, and custom devices. The company's products help engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, medical and aerospace/defense applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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Description

Datasheet Jul 14, 2015 FCD1300N80Z . FCD1300N80Z . TO252-3. (NiLFAlBW) (G). Jul 14, 2015. 1.0. FSSZ. 0.29183 g. Each. Manufacturing Process Information. Jul 14, 2015 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FCD1300N80Z . TO252-3 (NiLFAlBW) (G). FSSZ. FCD1300N80Z . R9. 1.47 . 1206. R11. 1.47 . 1206. R10. 1.47 . 1206. C5. 2.2 uF. R7. 27K. 1206. R6. 180K. 1206. CY1. 4.7nF, Y2. 300V~. R12. 22K. 1206. 11. Special Subject Book January 2000. SMD Packages. Never stop thinking. Thermal Resistance. Theory and Practice http://www.infineon.com FCD1300N80Z MOSFET, N-ch, 800V, 1.3 ohm, D-PAK. 1. Fairchild. D-PAK. U1. FL7733AMX. IC, single-stage PFC, PSR LED driver. 1. Fairchild. SOIC-8

Part Number FCD1300N80Z
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand ON Semiconductor
Description MOSFET N-CH 800V 4A TO252
Series SuperFET II
Packaging Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Rds On (Max) @ Id, Vgs 1.3 Ohm @ 2A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Image Discrete Semiconductor Products - Transistors
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