Description
Datasheet Jul 14, 2015 FCD1300N80Z . FCD1300N80Z . TO252-3. (NiLFAlBW) (G). Jul 14, 2015. 1.0. FSSZ. 0.29183 g. Each. Manufacturing Process Information. Jul 14, 2015 FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FCD1300N80Z . TO252-3 (NiLFAlBW) (G). FSSZ. FCD1300N80Z . R9. 1.47 . 1206. R11. 1.47 . 1206. R10. 1.47 . 1206. C5. 2.2 uF. R7. 27K. 1206. R6. 180K. 1206. CY1. 4.7nF, Y2. 300V~. R12. 22K. 1206. 11. Special Subject Book January 2000. SMD Packages. Never stop thinking. Thermal Resistance. Theory and Practice http://www.infineon.com FCD1300N80Z MOSFET, N-ch, 800V, 1.3 ohm, D-PAK. 1. Fairchild. D-PAK. U1. FL7733AMX. IC, single-stage PFC, PSR LED driver. 1. Fairchild. SOIC-8
Part Number | FCD1300N80Z |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 800V 4A TO252 |
Series | SuperFET II |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 52W (Tc) |
Rds On (Max) @ Id, Vgs | 1.3 Ohm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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