(5/5) based on 3 customer reviews
Description
MOSFET 2N-CH 20V 23A EFCP Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25～C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 2.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-CSP (1.77x3.54)
| Part Number | EFC6612R-A-TF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | ON Semiconductor |
| Description | MOSFET 2N-CH 20V 23A EFCP |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 2.5W |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, No Lead |
| Supplier Device Package | 6-CSP (1.77x3.54) |
| Image |  |
EFC6612R-A-TF
ONSEMICON
8000
1.27
MY Group (Asia) Limited
EFC6612R-A-TF
ON/ST
16000
2.3425
Finestock Electronics HK Limited
EFC6612R-A-TF
ON/CMD
10368
3.415
AIC Semiconductor Co., Limited
EFC6612R-A-TF
ON/SANYO
44406
4.4875
HK HEQING ELECTRONICS LIMITED
EFC6612R-A-TF
ONSEM
3260
5.56
ONSTAR ELECTRONICS CO., LIMITED
