Description
Recommended value 1 F. C4. 22 F. Output Electrolytic Capacitor. Q1. DTC114EUAT106 . PI2161 enable inverting polarity. R1. 120m . Current sense resistor. Jun 24, 2014 1uF. SNOOZE. SLEEP. PWR_UP. AGND. AGND. AGND. AGND. AGND. AGND. C17. 100uF. 2. 1. 3. Q1. DTC114EUAT106 . 1. 3. 2. Q2. BSS138. DTC114EUAT106 . NPN - Pre-Biased,50V, 50mA. SOT-323. Rohm. 13. 2. Q7, Q8. FJV1845. NPN -Transistor, 120V, 50mA. SOT-23. Fairchild. 14. 2. R3, R4. Jul 3, 2014 DTC114EUAT106 . Q7. BSS138. Q4. BSS138. 0.1 F. C29. 0.1 F. C28. 0.1 F. C27. 10. R37. 10. R36. 1uF. C31. 100k. R54. 100k. R51. 100k. DTC114EUAT106 . Rohm. Transistor, NPN, 50 V, 0.05 A, SOT-323. SOT-323. 31. R1. 1. 0.01. WSL0805R0100FEA18. Vishay-Dale. RES, 0.01 ohm, 1%, 0.25W,
Part Number | DTC114EUAT106 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 200MW UMT3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | UMT3 |
Image |
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