Part Number | CSD25211W1015 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 20V 3.2A 6DSBGA |
Series | NexFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 10V |
Vgs (Max) | -6V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 1.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-DSBGA (1x1.5) |
Package / Case | 6-UFBGA, DSBGA |
Image |
CSD25211W1015
ONSEMICON
10000
1.39
Shenzhen Taochip Electronic Co.,Ltd
CSD25211W1015
ON/ST
912
2.56
HK HEQING ELECTRONICS LIMITED
CSD25211W1015
ON/CMD
6000
3.73
Riking Technology (HK) Co., Limited
CSD25211W1015
ON/SANYO
11001
4.9
N&S Electronic Co., Limited
CSD25211W1015
ONSEM
141358
6.07
N&S Electronic Co., Limited