Description
BU323Z . NPN Silicon Power. Darlington. High Voltage Autoprotected. The BU323Z is a planar, monolithic, high voltage power. Darlington with a built in active Sep 25, 2000 BU323Z . ON Semiconductor. 2N6547. 2N6678. American Microsemiconductor. TEA18605D2. KSD5075T. Samsung Electronics. MJC10021. Dec 7, 2000 BU323Z . ON SEMI. BU806. BUD43B-001. BUD42D. ON SEMI. BUL44D2. BUL45D2. ON SEMI. BUL45F. BUS50. BUV11. BUV18A. BUZ80A. Oct 3, 2000 MTW8N50E. MJL21196. MBR3045WT. MUR16006A. BDV64B. TIP145. TIP146. TIP147. MTW35N15E. BUV48. MJW18020. BU323Z . SJE2448. Page 1. . J. A. JA. D. T. T . = P . JMAX. A. DMAX. JA. T. T. P. = . Application Report. SLVA462 May 2011. Understanding Thermal Dissipation and Design
Part Number | BU323Z |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN DARL 350V 10A TO-218 |
Series | - |
Packaging | Tube |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 10A |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Vce Saturation (Max) @ Ib, Ic | 1.7V @ 250mA, 10A |
Current - Collector Cutoff (Max) | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 5A, 4.6V |
Power - Max | 150W |
Frequency - Transition | 2MHz |
Operating Temperature | -65°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-218-3 |
Supplier Device Package | SOT-93 |
Image |
BU323Z
ONSEMICON
8000
1.32
MY Group (Asia) Limited
BU323Z
ON/ST
3260
2.67
ONSTAR ELECTRONICS CO., LIMITED
BU323ZG
ON/CMD
18000
4.02
MY Group (Asia) Limited
BU323ZG
ON/SANYO
50671
5.37
Belt (HK) Electronics Co
BU323ZG
ONSEM
3260
6.72
ONSTAR ELECTRONICS CO., LIMITED