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Description
The BDX33B and BDX33C are silicon. Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in. Jedec TO-220 plastic package. BDX33B, BDX33C (NPN). BDX34B, BDX34C (PNP). Darlington Complementary. Silicon Power Transistors. These devices are designed for general purpose ( lc= 100 mA, l5= 0) BDX33A, BDX34A 60. BDX338, BDX34B 80. BDX33C , BDX346 100. Collector Cutoff Current lCEO mA. (Vc= 22 V, l.= 0) BDX33 , BDX34 0.5. BDX33 , BDX33A, BDX33B, BDX33C , BDX33D. NPN SILICON POWER DARLINGTONS. PRODUCT. INFORMATION. 1. AUGUST 1993 - REVISED Jan 1, 2013 Collector-Base Voltage (IE=0). BDX33 . BDX33A. BDX33B. BDX33C . BDX33D. 45. 60. 80. 100. 100. V. VCEO. Collector-Emitter Voltage (IB=0).
| Part Number | BDX33C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | ON Semiconductor |
| Description | TRANS NPN DARL 100V 10A TO-220 |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 10A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 6mA, 3A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A, 3V |
| Power - Max | 70W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
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