(4/5) based on 17 customer reviews
Description
The BD433, BD435 , and BD437 are silicon epitaxial-base NPN power transistors in Jedec. SOT-32 plastic package, intented for use in medium power linear and DESCRIPTION. The UTC BD435 is a NPN epitaxial silicon transistor, it uses. UTCs advanced technology to provide the customers with high DC current gain, etc Jan 1, 2013 Parameter. Rating. Unit. VCEO. Collector-Emitter Voltage BD433. BD435 . BD437 . 22. 32. 45. V. VCBO. Collector-Base Voltage. BD433. BD435 . Apr 9, 2015 The UTC BD435 is a NPN epitaxial silicon transistor, it uses. UTCs advanced technology to provide the customers with high DC current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted). Symbol. Parameter. Value. Unit. VCBO. Collector-Base Voltage BD433. BD435 . BD437. 22. 32. 45. V.
| Part Number | BD435S |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | ON Semiconductor |
| Description | TRANS NPN 32V 4A TO-126 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 32V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 5V |
| Power - Max | 36W |
| Frequency - Transition | 3MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126 |
| Image |  |
BD435S
ONSEMICON
11841
0.51
HK HEQING ELECTRONICS LIMITED
BD435S
ON/ST
9841
1.235
Acon Electronics Limited
BD435S
ON/CMD
9000
1.96
Redstar Electronic Limited
BD435S
ON/SANYO
3550
2.685
Yingxinyuan INT'L (Group) Limited
BD435S
ONSEM
20500
3.41
Cicotex Electronics (HK) Limited
