Description
DATASHEET BD243B, BD243C (NPN),. BD244B, BD244C (PNP). Complementary Silicon. Plastic Power Transistors. These devices are designed for use in general purpose breakdown voltage. IC = 30 mA. (see Note 5). IB = 0. BD243 . BD243A. BD243B. BD243C . 45. 60. 80. 100. V. ICES. Collector-emitter cut-off current. VCE = 55 V. Jun 1, 1973 Collector-emitter voltage (RBE = 100 ). BD243 . BD243A. BD243B. BD243C . VCER. 55. 70. 90. 115. V. Collector-emitter voltage (IC = 30 mA). Feb 1, 2006 BD243C -S. BD243 -S. BD244. BD244A. BD244A-S. BD244B. BD244B-S. BD244C. BD244C-S. BD244-S. BD539B. BD539B-S. BD539C.
Part Number | BD243C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN 100V 6A TO-220 |
Series | - |
Packaging | Tube |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 6A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 6A |
Current - Collector Cutoff (Max) | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 4V |
Power - Max | 65W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
BD243C
ONSEMICON
12800
0.51
Sunton Electronics Co., Limited
BD243C
ON/ST
12761
1.58
HK HEQING ELECTRONICS LIMITED
BD243C
ON/CMD
180
2.65
SUNTOP SEMICONDUCTOR CO., LIMITED
BD243C
ON/SANYO
20000
3.72
HK XINYI COMPONENTS ASIA CO., LIMITED
BD243C
ONSEM
81978
4.79
Cicotex Electronics (HK) Limited