Description
Low Forward Voltage. Low Power Loss/High Efficiency. High Surge Capacity. 175 C Operating Junction Temperature. 30 A Total (15 A Per Diode Leg).
Part Number | B30H60G |
Brand | ON Semiconductor |
Image |
B30H60G
ONSEMICON
9999
0.76
HK HEQING ELECTRONICS LIMITED
B30H60G
ON/ST
28321
1.4125
MASSTOCK ELECTRONICS LIMITED
B30H60G
ON/CMD
10000
2.065
Hong Kong Capital Industrial Co.,Ltd
B30H60G
ON/SANYO
22350
2.7175
N&S Electronic Co., Limited
B30H60G
ONSEM
494
3.37
Yingxinyuan INT'L (Group) Limited