Description
The MBRD1035CTL employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity
Part Number | B1035CLG |
Brand | ON Semiconductor |
Image |
B1035CLG
ONSEMICON
2603
0.68
LanKa Micro Electronic Co.,Limited
B1035CLG
ON/ST
2603
1.7025
KDH SEMICONDUCTOR CO., LIMITED
B1035CLG
ON/CMD
1855
2.725
HONG KONG IFUSON TECHNOLOGY CO., LIMITED
B1035CLG
ON/SANYO
10
3.7475
Yingxinyuan INT'L (Group) Limited
B1035CLG
ONSEM
23603
4.77
N&S Electronic Co., Limited