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Description
DATASHEET The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load This AOS product reliability report summarizes the qualification result for AO4407A . Accelerated environmental tests are performed on a specific sample size, Dec 27, 2005 This AOS product reliability report summarizes the qualification result for AO4407 . Accelerated environmental tests are performed on a specific Y - Year code. W - Week code. L&T - Assembly lot code. PART NO. DESCRIPTION CODE. AO4407 Green product 4407. AO4407 L Green product 4407. LIUULI.
| Part Number | AO4407A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET P-CH 30V 12A 8SOIC |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 15V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 12A, 20V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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