(4/5) based on 6 customer reviews
Description
Aug 5, 2011 II Power MOSFET. SOT-223. ST. STN4NF03L. 1. 13 Q5,Q8,Q9. Low voltage fast- switching. NPN power transistor. SOT-23. ST. 2STR1230 . 3 reference, and consequently, drives the BJT 2STR1230 to minimize the current error. For this operation, TSV992 is suitable for managing the 25kHz PWM signal 2STR1230 . 1. SOT-23. CN1. Header 4. 1. Through hole, pitch 2.54 mm. CN2. Header 5x2. 1. Through hole, pitch 2.54 mm. CN3. MINI-B USB receptacle. 1. Apr 23, 2014 MMSS8050-L. Features. SOT-23 Plastic-Encapsulate Transistors. Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. mounted on board. STMicroelectronics. 2STR1230 . 100. 4. Q9,Q9A,Q10,Q10A. STW56N60M2 or. STW56N60M2-4. 650V, 57A. MDmesh M2 Power MOSFET.
| Part Number | 2STR1230 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | ON Semiconductor |
| Description | TRANS NPN 30V 1.5A SOT-23 |
| Series | - |
| Packaging | |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1.5A |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 850mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
| Power - Max | 500mW |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Image |  |
2STR1230
ONSEMICON
3000
0.86
Hong Kong KunYou Technology Co., Limited
2STR1230
ON/ST
55
2.215
FLOWER GROUP(HK)CO.,LTD
2STR1230
ON/CMD
389600
3.57
Shenzhen WTX Capacitor Co., Ltd.
2STR1230
ON/SANYO
12500
4.925
Antony Electronic Ltd.
2STR1230
ONSEM
6000
6.28
Yingxinyuan INT'L (Group) Limited
