Part Number | 2SK3666-3-TB-E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - JFETs |
Brand | ON Semiconductor |
Description | JFET N-CH 10MA 200MW 3CP |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Voltage - Breakdown (V(BR)GSS) | - |
Drain to Source Voltage (Vdss) | 30V |
Current - Drain (Idss) @ Vds (Vgs=0) | 1.2mA @ 10V |
Current Drain (Id) - Max | 10mA |
Voltage - Cutoff (VGS off) @ Id | 180mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
Resistance - RDS(On) | 200 Ohm |
Power - Max | 200mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | 3-CP |
Image |
2SK3666-3-TB-E
ONSEMICON
9374
0.18
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
2SK3666-3-TB-E
ON/ST
7424
0.665
Belt (HK) Electronics Co
2SK3666-3-TB-E
ON/CMD
5784
1.15
RX ELECTRONICS LIMITED
2SK3666-3-TB-E
ON/SANYO
5330
1.635
Yingxinyuan INT'L (Group) Limited
2SK3666-3-TB-E
ONSEM
7336
2.12
Cicotex Electronics (HK) Limited