(5/5) based on 17 customer reviews
Description
2N6487, 2N6488 (NPN),. 2N6490, 2N6491 (PNP). Complementary Silicon. Plastic Power Transistors. These devices are designed for use in general purpose 2N6488 (NPN); and 2N6490, 2N6491 (PNP) are complementary devices. Features. DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; Apr 25, 2003 2N6388, 2N6487, 2N6488 , 2N6490, 2N6491, 2N6667, 2N6668, BD135, BD136, BD137, BD138,. BD139, BD140, BD159, BD179, BD180, 5.0. 1.3. 5.0. 5.0. 2N6488 . 2N6491. 15. 75. 90. 80. 20. 150. 5.0. 1.3. 5.0. 5.0. Standard. Optional. TO-220. TO-220FP Full Pak. Fully Isolated. (6-December 2004) Mar 13, 2001 2N6341. 2N6387. 2N6388. 2N6438. 2N6487. 2N6488 . 2N6490. 2N6491. 2N6497. 2N6609. 2N6667. 2N6668. BD135. BD136. BD137. BD138.
| Part Number | 2N6488 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | ON Semiconductor |
| Description | TRANS NPN 80V 15A TO220AB |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 15A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 5A, 15A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A, 4V |
| Power - Max | 1.8W |
| Frequency - Transition | 5MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
2N6488
ONSEMICON
633
1.48
HK HEQING ELECTRONICS LIMITED
2N6488
ON/ST
8350
2.6425
ONSTAR ELECTRONICS CO., LIMITED
2N6488
ON/CMD
10040
3.805
N&S Electronic Co., Limited
2N6488
ON/SANYO
5000
4.9675
Ande Electronics Co., Limited
2N6488
ONSEM
4768
6.13
CIS Ltd (CHECK IC SOLUTION LIMITED)
