Description
MAXIMUM RATINGS: (TC=25 C). SYMBOL 2N6043. 2N6044. 2N6045 . UNITS. Collector-Base Voltage. VCBO. 60. 80. 100. V. Collector-Emitter Voltage. VCEO. 2.0 Vdc (Max) @ IC = 3.0 Adc 2N6042, 2N6045 . Monolithic Construction with Built In Base Emitter Shunt Resistors. Epoxy Meets UL 94 V 0 @ 0.125 in. CP127- 2N6045 . NPN - Darlington Transistor Die. 8.0 Amp, 100 Volt. MECHANICAL SPECIFICATIONS: Die Size. 110 x 110 MILS. Die Thickness. 10.6 MILS. 2N6045 : 8.0 A, 100 V NPN Darlington Bipolar Power Transistor. For complete documentation, see the data sheet. The 8 A, 100 V NPN Darlington Bipolar Power Surface Mount Replacements for 2N6040 2N6045 Series,. TIP120 TIP122 Series, and TIP125 TIP127 Series. Monolithic Construction With Built in
Part Number | 2N6045 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN DARL 100V 8A TO220AB |
Series | - |
Packaging | Tube |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 12mA, 3A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A, 4V |
Power - Max | 75W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
2N6045
ONSEMICON
8900
0.74
ONSTAR ELECTRONICS CO., LIMITED
2N6045
ON/ST
8000
1.9075
MY Group (Asia) Limited
2N6045
ON/CMD
42
3.075
Semitech Inc
2N6045
ON/SANYO
504
4.2425
Prime Semiconductors LLP
2N6045
ONSEM
42557
5.41
Cicotex Electronics (HK) Limited