ON Semiconductor

Description

2N6027 /D. 2N6027 , 2N6028. Preferred Device. Programmable. Unijunction Transistor. Programmable Unijunction. Transistor Triggers. Designed to enable the engineer to program unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor trigger, oscillator,. The UTC 2N6027 is a programmable unijunction transistor, it uses. UTCs advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and high peak output voltage, etc. The UTC 2N6027 is suitable for timing, thyristor-trigger, oscillator and pulse circuits, etc. CP622- 2N6027 . Programmable. Unijunction Transistor Die. Die Size. 27.5 x 27.5 MILS. Die Thickness. 9.45 MILS. Anode Bonding Pad Size. 7.1 x 5.1 MILS. Cathode Bonding Pad Size 7.1 x 5.1 MILS. Top Side Metalization. Al 20,000 . Back Side Metalization. Au 13,000 . Scribe Alley Width. 3.6 MILS. Wafer Diameter. 2N6027 . 2N6028. SILICON. PROGRAMMABLE. UNIJUNCTION TRANSISTORS. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as. GATE TO ANODE DC ANODE GATE TO ANODE. PEAK CURRENT. VALLEY CURRENT. CASE. REVERSE. CURRENT. LEAKAGE. VOLTAGE. CURRENT. VGAR. IT. IGAO. IP. IV. VS=40Vdc. RG=10K RG=1.0M RG=10K RG=1.0M . (V). (mA). (nA). ( A). ( A). ( A). ( A). MIN. MIN. MAX. MAX. MAX. MIN. MAX. 2N6027 .