(5/5) based on 18 customer reviews
Description
2N5190G, 2N5191G ,. 2N5192G. Silicon NPN Power. Transistors. Silicon NPN power transistors are for use in power amplifier and switching circuits excellent us (A). V(BR)CEO. Min (V). hFE Min. hFE Max. fT Min. (MHz). PTM Max. (W). Package. Type. 2N5191G . Pb-free. Halide free. Active. NPN. General. Purpose. 0.6. Jul 28, 2016 Upon the expiration of this FPCN, Bipolar Power Transistor, SCR and TRIAC devices will be processed at ON Semiconductor Shenzhen (NO),. Sep 24, 2010 The ISMF facility is an ON Semiconductor owned wafer fab that has been producing products for ON. Semiconductor since 1998. Several Apr 29, 2009 2N5038G. 2N5190G. 2N5190G. 2N5191. 2N5191G . 2N5192. 2N5192G. 2N5194 . 2N5194G. 2N5195. Issue Date: 29 Apr 2009. Rev.07-31-07.
| Part Number | 2N5191G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | ON Semiconductor |
| Description | TRANS NPN 60V 4A TO225AA |
| Series | - |
| Packaging | Bulk |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 1A, 4A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1.5A, 2V |
| Power - Max | 40W |
| Frequency - Transition | 2MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-225AA |
| Image |  |
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Bonase Electronics (HK) Co., Limited
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Yingxinyuan INT'L (Group) Limited
