(4/5) based on 13 customer reviews
Description
Datasheet 2N3416. 2N3417 . This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. 2N3417 MPS3417. SILICON. NPN TRANSISTORS. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series devices are silicon NPN 2N3417 NPN LOW NOISE. ECB. 50. 50. 5.0. 100. 50. 180. 540 4.50. 2.0. 0.30. 50 . - -. - -. - -. - -. 2N3702 PNP AMPL/SWITCH ECB. 40. 25. 5.0. 100. 20. 60. 300. Jul 25, 2003 ST 2N3416 / 2N3417 . NPN Silicon Epitaxial Planar Transistor. General Purpose Amplifier. For use as general purpose amplifiers and switches. 41-503.21A. 2. TYPE KF. UNDER-FREQUENCY RELAY. F ig u re. 1: Ty pe K. F. R e la y fo r 60 H e rtz w ith out C a se . (F ron t &. R ear V ie w .) F ron t V iew. R.
| Part Number | 2N3417 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | ON Semiconductor |
| Description | TRANS NPN 50V 0.5A TO-92 |
| Series | - |
| Packaging | Tape & Box (TB) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 3mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 4.5V |
| Power - Max | 625mW |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
| Image |  |
2N3417
ONSEMICON
14000
1.81
MY Group (Asia) Limited
2N3417
ON/ST
30
2.41
Yingxinyuan INT'L (Group) Limited
2N3417
ON/CMD
7500
3.01
Cicotex Electronics (HK) Limited
2N3417
ON/SANYO
2500
3.61
RX ELECTRONICS LIMITED
2N3417
ONSEM
10000
4.21
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
