Description
The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of . The UTC 10N60 -CB is a high voltage and high current power. MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, The UTC 10N60 -Q is a high voltage and high current power. MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low Aug 28, 2017 The UTC 10N60 -MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,
Part Number | 10N60C |
Brand | ON Semiconductor |
Image |
10N60C
ONSEMICON
5000
1.49
XingSheng Technology (HK) Limited
10N60C
ON/ST
9650
2.6075
Ysx Tech Co., Limited
10N60C
ON/CMD
9650
3.725
Rzxc Electronics Co., Limited
10N60C
ON/SANYO
4931
4.8425
Sino Star Electronics (HK) Co.,Limited
10N60C
ONSEM
191964
5.96
Cicotex Electronics (HK) Limited